HGH25N120A - N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

HGH25N120A Datasheet Preview — Preview of HGH25N120A PDF

Datasheet Details

Part number	HGH25N120A
Manufacturer	HUASHAN ELECTRONIC
File Size	0.96 MB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HGH25N120A-HUASHANELECTRONIC.pdf

HGH25N120A Product details

Description

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current（TC = 25℃） Collector Current（TC = 100℃） Ratings 1200 ±30 50 25 Units V V A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximum Power Dissipation（TC = 100℃） 200 80 W W TJ Operating Junction Temperature -55～+150 ℃ Tstg Storage Temperature Range -55～+150 ℃ Maximum Lea

Features

s TO-3P.
Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V.
High input impedance.
Field stop trench technology offer superior conduction and switching performances,.
High speed switching.
Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VCES VGES IC.

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