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HPP600R1K0DN - Silicon N-Channel Power MOSFET

HPP600R1K0DN Description

Silicon N-Channel Power MOSFET HPP600R1K0DN ○R General .
HPP600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve swit.

HPP600R1K0DN Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
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