HPD600R2K3DN - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

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Datasheet Details

Part number	HPD600R2K3DN
Manufacturer	HUAJING MICROELECTRONICS
File Size	469.21 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HPD600R2K3DN-HUAJINGMICROELECTRONICS.pdf

HPD600R2K3DN Product details

Description

HPD600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test.

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Published: Mar 22, 2018 |