Datasheet4U Logo Datasheet4U.com

CS4J60B3-G - Silicon N-Channel Power MOSFET

CS4J60B3-G Description

Silicon N-Channel Power MOSFET CS4J60 B3-G General .
CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchin.

CS4J60B3-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 600 V 3.5 A 56 W 2.0 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse

📥 Download Datasheet

Preview of CS4J60B3-G PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • CS400 - High Voltage Bridge Rectifiers (High Voltage Power Solutions)
  • CS4041 - CHIP set (Chips)
  • CS4050V-01L - Current Sense Transformers (Coilcraft)
  • CS40D - Schottky-Bridge Rectifiers (Diotec Semiconductor)
  • CS40L100CT-A - Super Low Barrier High Voltage Power Rectifier (CITC)
  • CS40L60CT-A - Low Barrier Diode (CITC)
  • CS40N045A4 - Silicon N-Channel Power MOSFET (CR Micro)
  • CS40N20A8 - Silicon N-Channel Power MOSFET (Huajing Microelectronics)

📌 All Tags

Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS CS4J60B3-G-like datasheet

CS4J60B3-G Stock/Price