HS70N06PA - N-CHANNEL MOSFET

Datasheet Details

The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed.

RDS(ON)=15mΩ@VGS=10V.
Ultra low gate charge (typical 90nC).
Low reverse transfer capacitance.
Fast switching capability.
100％ avalanche energy specified.
Improved dv/dt capability 3. Pin configuration TO-220 Pin 1 2 3 1 of 6 Function Gate Drain Source 0 Amps, 60 Volts N-.

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Published: Apr 2, 2018 |