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Plastic-Encapsulate Transistors
FEATURES
High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)
MMBTA42(NPN)
MARKING: 1D
Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance, junction to Ambient Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC RÓ¨JA TJ Tstg
300 300 5 500 0.35 357 150 -55to +150
Units
V V V mA W /mW
1. BASE 2. EMITTER 3.