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BZX84C6V8 - Plastic-Encapsulate Diodes

Download the BZX84C6V8 datasheet PDF. This datasheet also covers the BZX84C2V4 variant, as both devices belong to the same plastic-encapsulate diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcesses Plastic-Encapsulate Diodes BZX84C series SOT-23 Maximum Ratings (TA=25 unless otherwise noted) Characteristic Symbol Forward Voltage (Note 2) @ IF = 10mA VF Power Dissipation(Note 1) PD Thermal Resistance, Junction to Ambient Air RθJ Operating and Storage Temperature Range Tj,TST Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BZX84C2V4-HOTTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZX84C6V8
Manufacturer HOTTECH
File Size 281.25 KB
Description Plastic-Encapsulate Diodes
Datasheet download datasheet BZX84C6V8 Datasheet

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Other Datasheets by HOTTECH

Part Number Description
BZX84C6V8W ZENER DIODES
BZX84C6V2 Plastic-Encapsulate Diodes
BZX84C6V2W ZENER DIODES
BZX84C10 Plastic-Encapsulate Diodes
BZX84C10W ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ZENER DIODES FEATURES Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcesses Plastic-Encapsulate Diodes BZX84C series SOT-23 Maximum Ratings (TA=25 unless otherwise noted) Characteristic Symbol Forward Voltage (Note 2) @ IF = 10mA VF Power Dissipation(Note 1) PD Thermal Resistance, Junction to Ambient Air RθJ Operating and Storage Temperature Range Tj,TST Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 self-heating effect 3. f=1KHZ Value Unit 0.9 V 350 mW 357 /W -65~ +150 2. Short duration test pulse used to minimize GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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