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BZT52C6V8S - Plastic-Encapsulate Diodes

Download the BZT52C6V8S datasheet PDF. This datasheet also covers the BZT52C2V0S variant, as both devices belong to the same plastic-encapsulate diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Voltage @ IF=10mA Symbol VF Value 0.9 Power Dissipation Pd 200 Thermal resistance,junction to ambient air RθjA 625 Junction temperature Tj 150 Storage temperature range Tstg -65-150 Notes: 1. Valid provided that device terminals are kept at a.

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Note: The manufacturer provides a single datasheet file (BZT52C2V0S-HOTTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZT52C6V8S
Manufacturer HOTTECH
File Size 270.20 KB
Description Plastic-Encapsulate Diodes
Datasheet download datasheet BZT52C6V8S Datasheet

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Other Datasheets by HOTTECH

Part Number Description
BZT52C6V2S Plastic-Encapsulate Diodes
BZT52C10S Plastic-Encapsulate Diodes
BZT52C11S Plastic-Encapsulate Diodes
BZT52C12S Plastic-Encapsulate Diodes
BZT52C13S Plastic-Encapsulate Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Plastic-Encapsulate Diodes ZENER DIODES FEATURES Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Voltage @ IF=10mA Symbol VF Value 0.9 Power Dissipation Pd 200 Thermal resistance,junction to ambient air RθjA 625 Junction temperature Tj 150 Storage temperature range Tstg -65-150 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Short duration test pulse used in minimize self-heating effect. 3. f = 1KHz. Unit V mW /W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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