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HY3810B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3810B, a member of the HY3810 N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 100V/180A RDS(ON) = 5.0 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

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Datasheet preview – HY3810B

Datasheet Details

Part number HY3810B
Manufacturer HOOYI
File Size 939.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3810B Datasheet
Additional preview pages of the HY3810B datasheet.

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Full PDF Text Transcription

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems.
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