HY3610P N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY3610P N-Channel Enhancement Mode MOSFET .
100V/160A RDS(ON) = 4. 100% avalanche tested. Reliable and Rugged. Lead Free and Green Dev.

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Datasheet Specifications

Part number: HY3610P
Manufacturer: HOOYI
File Size: 1.10 MB
Datasheet: HY3610P-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Switching application
* Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY3610 YYÿ XXXJWW G Package Code P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compou

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HY3610P N-Channel Enhancement Mode MOSFET HOOYI

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