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HY3306P - N-Channel Enhancement Mode MOSFET

HY3306P Description

HY3306P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L DS G TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

HY3306P Features

* 60V/130A RDS(ON) = 5.4 mΩ (typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

HY3306P Applications

* Switching application
* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI l

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Datasheet Details

Part number
HY3306P
Manufacturer
HOOYI
File Size
3.80 MB
Datasheet
HY3306P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HOOYI
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