Description
HI-SINCERITY MICROELECTRONICS CORP.HT666 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page .
The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.
High Frequency Current Gain.
Features
* High Frequency Current Gain
* High Speed Switching Transistor
TO-92
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW