H07N60F Features
* High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum
Datasheet Details
H07N60F, H07N60E-HI
HI-SINCERITY
23.64 KB
Pnp epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: H07N60F, H07N60E-HI.
Please refer to the document for exact specifications by model.
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