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H06N60E, H06N60U-HI Datasheet - HI-SINCERITY

H06N60E N-Channel Power Field Effect Transistor

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H06N60E Features

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to

H06N60U-HI-SINCERITY.pdf

This datasheet PDF includes multiple part numbers: H06N60E, H06N60U-HI. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H06N60E, H06N60U-HI

Manufacturer:

HI-SINCERITY

File Size:

70.89 KB

Description:

N-channel power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: H06N60E, H06N60U-HI.
Please refer to the document for exact specifications by model.

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H06N60E H06N60U-HI N-Channel Power Field Effect Transistor HI-SINCERITY

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