H05N60E, H05N60E-Hi Datasheet - HI-SINCERITY

H05N60E N-Channel Power Field Effect Transistor

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters.

H05N60E Features

* Higher Current Rating

* Lower RDS(on)

* Lower Capacitances

* Lower Total Gate Charge

* Tighter VSD Specifications

* Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: G

H05N60E-Hi-SincerityMocroelectronics.pdf

H05N60E Datasheet Preview — This datasheet PDF includes multiple part numbers: H05N60E, H05N60E-Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H05N60E, H05N60E-Hi

Manufacturer:

HI-SINCERITY

File Size:

56.83 KB

Description:

N-channel power field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: H05N60E, H05N60E-Hi.
Please refer to the document for exact specifications by model.

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TAGS

H05N60E H05N60E-Hi N-Channel Power Field Effect Transistor HI-SINCERITY

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