HU50N06 - 60V N-Channel MOSFET

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.022 Ω (Typ. ) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD50N06 HU50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source.

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Published: Aug 2, 2016 |