HD60N03 - 30V N-Channel MOSFET

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ. ) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Published: Apr 6, 2016 |