HMS8N65I - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS8N65I
Manufacturer	H&M Semiconductor
File Size	737.33 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	HMS8N65I-HMSemiconductor.pdf

HMS8N65I Product details

Description

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS 650 V RDS(ON) MAX 540 mΩ ID 8 A.

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Published: Jul 1, 2025 |