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HMS20N80F - 800V N-Channel Super Junction MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS20N80F
Manufacturer	H&M Semiconductor
File Size	383.02 KB
Description	800V N-Channel Super Junction MOSFET
Datasheet	HMS20N80F-HMSemiconductor.pdf

HMS20N80F Product details

Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 20 0.25 13.7 Unit V A Ω nC.

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Published: Jul 1, 2025 |