Description
This Power MOSFET is producFeeadtuurseisng H&M Semi’s
Advanced Super-Junction This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
HMS15N50F,HM
Features
- -15A, 500V, RDS(on) typ. = 0.28Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
HMS15N50F
HMS15N50
HMS15N50T
HMS15N50A
D
TO-220F GDS
GDS
TO-220 GDS
TO-247 GDS
TO-3P
G S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
TO-220/247/3P
TO-220F
VDSS Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
IDM
Drain Current - Pulsed
(Note 1.