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HMS130N20 Datasheet - H&M Semiconductor

HMS130N20 N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS130N20 Features

* VDS =200V,ID =130A RDS(ON)=9.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.4mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

HMS130N20-HMSemiconductor.pdf

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Datasheet Details

Part number:

HMS130N20

Manufacturer:

H&M Semiconductor

File Size:

812.37 KB

Description:

N-channel super trench ii power mosfet.

HMS130N20 Distributor

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HMS130N20 HMS130N20 N-Channel Super Trench Power MOSFET H&M Semiconductor