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HMN10N65Q - 650V GaN Enhancement-mode Power Transistor

H&M Semiconductor

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Datasheet Details

Part number	HMN10N65Q
Manufacturer	H&M Semiconductor
File Size	3.92 MB
Description	650V GaN Enhancement-mode Power Transistor
Datasheet	HMN10N65Q-HMSemiconductor.pdf

HMN10N65Q Product details

Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm size

Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

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Published: Jun 30, 2025 |