HM9926 Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM9926 Dual N-Channel Enhancement Mode Power MOSFET .
The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM9926
Manufacturer: H&M Semiconductor
File Size: 384.20 KB
Datasheet: HM9926-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson

HM9926 Distributors

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HM9926 Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM9926-like datasheet