HM80N70 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM80N70
Manufacturer	H&M Semiconductor
File Size	773.94 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM80N70-HMSemiconductor.pdf
Additional preview pages of the HM80N70 datasheet.

Product details

Description

HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Tape width - Quantity - +01 80VDS／±25VGS／66A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID IDP IS TJ TSTG Drain-Source Voltage Gate Source Voltage Parame

Features

VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max. )@VGS=10V.
Reliab le and Rugged.
Advancedtrench process technology.
HighDensity Cell Design For Ultra Low On-Resistance .

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Published: Apr 12, 2021 |