HM4953B Dual P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4953B Dual P-Channel Enhancement Mode Power MOSFET .
The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM4953B
Manufacturer: H&M Semiconductor
File Size: 563.69 KB
Datasheet: HM4953B-HMSemiconductor.pdf
Description: Dual P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

HM4953B Distributors

📁 Related Datasheet

HM4-6514-B HM4-6516-9 HM4-65162-9 HM4-65162B-9 HM4-65162C-9 HM4-65642883

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HM4953B Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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