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HM4822B - Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4822B
Manufacturer	H&M Semiconductor
File Size	635.71 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4822B-HMSemiconductor.pdf

HM4822B Product details

Description

The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.

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Published: Feb 13, 2025 |