HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor .
The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM4618SP
Manufacturer: H&M Semiconductor
File Size: 489.95 KB
Datasheet: HM4618SP-HMSemiconductor.pdf
Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VSSS =20V,IS =6A
* 2.5V drive
* Common-drain type
* 2KV HBM Package Information

HM4618SP Distributors

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HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

H&M Semiconductor HM4618SP-like datasheet