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HM4618SP - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

HM4618SP Description

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor .
The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.

HM4618SP Features

* VSSS =20V,IS =6A
* 2.5V drive
* Common-drain type
* 2KV HBM Package Information

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Datasheet Details

Part number
HM4618SP
Manufacturer
H&M Semiconductor
File Size
489.95 KB
Datasheet
HM4618SP-HMSemiconductor.pdf
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor
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