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HM4488 - N-Channel Enhancement Mode Power MOSFET

HM4488 Description

+0 N-Channel Enhancement Mode Power MOSFET .
The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4488 Features

* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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Datasheet Details

Part number
HM4488
Manufacturer
H&M Semiconductor
File Size
450.46 KB
Datasheet
HM4488-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4488-like datasheet