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HM4435B - P-Channel Enhancement Mode Power MOSFET

HM4435B Description

HM4435B P-Channel Enhancement Mode Power MOSFET .
The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

HM4435B Features

* VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM4435B
Manufacturer
H&M Semiconductor
File Size
413.48 KB
Datasheet
HM4435B-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4435B-like datasheet