HM40N06D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM40N06D N-Channel Enhancement Mode Power MOSFET .
The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM40N06D
Manufacturer: H&M Semiconductor
File Size: 477.32 KB
Datasheet: HM40N06D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =60V,ID =40A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technol

HM40N06D Distributors

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HM40N06D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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