HM2N65R - N-channel Enhanced VDMOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2N65R
Manufacturer	H&M Semiconductor
File Size	936.72 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM2N65R-HMSemiconductor.pdf

HM2N65R Product details

Description

HM2N65R the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223-3L, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 15, 2025 |