HM18N50F, HM18N50A Datasheet - H&M Semiconductor

HM18N50F 500V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

HM18N50F Features

* - 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V - Low gate charge ( typical 69nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

HM18N50A-HMSemiconductor.pdf