2314 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2314B N-Channel Enhancement Mode Power MOSFET .
The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: 2314
Manufacturer: H&M Semiconductor
File Size: 711.50 KB
Datasheet: 2314-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

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📁 Related Datasheet

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2314 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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