GC3M0032120D - Silicon Carbide Power MOSFET

Datasheet Details

Part number	GC3M0032120D
Manufacturer	Gwok
File Size	3.72 MB
Description	Silicon Carbide Power MOSFET
Datasheet	GC3M0032120D-Gwok.pdf

VDS 12 00 V High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant ID @ 25˚C RDS(on) 63 A 32 mΩ Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
Reduce cooling requirements.
Increase power density.
Increase system switching frequency Applicati.

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Published: Nov 8, 2024 |