2SK3899 - MOS Field Effect Transistor

Guangdong Kexin

Datasheet Details

Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature.
PW 10 s,Duty Cycle 1%.

📁 2SK3899 Similar Datasheet

Other Datasheets by Guangdong Kexin

Published: Apr 6, 2009 |