2SC3736 - NPN Silicon Epitaxial Transistor

Guangdong Kexin Industrial

Datasheet Details

Part number	2SC3736
Manufacturer	Guangdong Kexin Industrial
File Size	79.82 KB
Description	NPN Silicon Epitaxial Transistor
Datasheet	2SC3736_GuangdongKexinIndustrial.pdf

High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse).
Total power dissipation Junction temperature Storage temperature.
PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 80 45 5 1 2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter.

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Published: Sep 22, 2009 |