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GPT14N65D - POWER FIELD EFFECT TRANSISTOR

Download the GPT14N65D datasheet PDF. This datasheet also covers the GPT14N65 variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at El.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT14N65-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT14N65D
Manufacturer Greatpower
File Size 229.30 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT14N65D Datasheet

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Other Datasheets by Greatpower

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GPT14N65 POWER FIELD EFFECT TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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