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GPT14N65 - POWER FIELD EFFECT TRANSISTOR

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at El.

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Datasheet Details

Part number GPT14N65
Manufacturer Greatpower
File Size 229.30 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT14N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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