Datasheet4U Logo Datasheet4U.com

GPT11N65D - POWER FIELD EFFECT TRANSISTOR

Download the GPT11N65D datasheet PDF. This datasheet also covers the GPT11N65 variant, as both devices belong to the same power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT11N65-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT11N65D
Manufacturer Greatpower
File Size 1.18 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT11N65D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GPT1000A General Touch Sensor Controller Generalplus
GPT1001A General Touch Sensor Controller Generalplus
GPT8340A 46 TOUCH IO Generalplus
GPT8P340A1 46 TOUCH IO Generalplus
GPTP1270 PHASE CONTROLLED SCR Green Power Solutions srl

Other Datasheets by Greatpower

Part Number Description
GPT11N65 POWER FIELD EFFECT TRANSISTOR
GPT11N70 POWER FIELD EFFECT TRANSISTOR
GPT11N70D POWER FIELD EFFECT TRANSISTOR
GPT10N45 POWER FIELD EFFECT TRANSISTOR
GPT10N45D POWER FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GPT11N65 / GPT11N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Published: |