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GPT03N70 - POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT03N70
Manufacturer Greatpower
File Size 499.49 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT03N70 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GPT03N70 POWER FIELD EFFECT TRANSISTOR 06GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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