GPT02N70
DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP Top View
TO-251 Top View
TO-252 Top View
GATE DRAIN SOURCE
GATE DRAIN SOURCE
12 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
Total Power Dissipation TO-251/TO-252 TO-220 TO-220FP
Derate above 25℃ TO-251/TO-252 TO-220 TO-220FP
Operating and Storage Temperature Range Single...
