GSMDS3906 Datasheet (Globaltech)

GSMDS3906, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDS3906 Features

* 30V, 20A, RDS(ON)=6mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* LED Applications

* Hand-Held Device Packages & Pin Assignments