GSMDD3094 Datasheet (Globaltech)

GSMDD3094, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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GSMDD3094 Features

* 30V, 90A, RDS(ON)=4mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* TO-252-2L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages &