GSMDC6906Z Datasheet (Globaltech)

GSMDC6906Z, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDC6906Z Features

* 60V, 33A, RDS(ON)=21mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN3X3-8L package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin Assi