GSMDC3801R Datasheet (Globaltech) - N-Channel Power MOSFET

GSMDC3801R, N-Channel Power MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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GSMDC3801R Features

* 30V, 55A, RDS(ON)=9mΩ@VGS=10V (Q1)

* 30V, 80A, RDS(ON)=6mΩ@VGS=10V (Q2)

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN5X6-8L package design Applications

* MB / VGA / Vcore

* P