GSMC3944X Datasheet (Globaltech)

GSMC3944X, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMC3944X Features

* 30V, 75A, RDS(ON)=2.4mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guarantee ±20V

* Green Device Available

* DFN5X6-8L package design Applications

* Server Power

* DC-DC Load Switch

* Motor Driver Applications