Datasheet4U.com

GSMBSS139Y - Dual N-Channel Enhancement MOSFET

Globaltech

📥 Download Datasheet

GSMBSS139Y Datasheet Preview — Preview of GSMBSS139Y PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GSMBSS139Y
Manufacturer	Globaltech
File Size	1.76 MB
Description	Dual N-Channel Enhancement MOSFET
Datasheet	GSMBSS139Y-Globaltech.pdf

GSMBSS139Y Product details

Description

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

Features

60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V.
Improved dv/dt Capability.
Fast Switching.
Green Device Available.
SOT-563 Package Design.
ESD Protected : 1500V.

📁 GSMBSS139Y Similar Datasheet

GSMBD2004 - SWITCHING DIODE (GTM)
GSMBD4148 - SWITCHING DIODE (GTM)
GSMBR0520 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0530 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0540 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0560 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0580 - Schottky Barrier Diode (GOOD-ARK)
GSMBRD20100 - Surface Mount Schottky Rectifiers (GOOD-ARK)

Other Datasheets by Globaltech

GSMBSS139 - N-Channel MOSFET
GSMBSS139W - 60V N-Channel MOSFET
GSMBSS123 - N-Channel MOSFET
GSMBSS84 - 60V P-Channel Enhancement Mode MOSFET
GSM02N15 - N-Channel MOSFET
GSM02P15 - P-Channel MOSFET

Published: Oct 15, 2024 |