GSM8205 Datasheet (Globaltech) - N-Channel Power MOSFET

GSM8205, N-Channel Power MOSFET

GSM8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss

GSM8205 Features

* 20V/5A,RDS(ON)=29mΩ@VGS=4.5V

* 20V/3.2A,RDS(ON)=37mΩ@VGS=2.5V

* 20V/2.4A,RDS(ON)=50mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSOP-6 & TSSOP-8P package desig