GSM3612P Datasheet (Globaltech) - 30V N-Channel MOSFETs

GSM3612P, 30V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM3612P Features

* 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 2.5V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* LED applications GSM3612P Packages & Pin Assignments