GSM2165JZF Datasheet (Globaltech) - 20V P-Channel MOSFETs

GSM2165JZF, 20V P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM2165JZF Features

* -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Hand-held Instruments

* Packages & Pin Assignm